Ullrich R. Pfeiffer received the diploma degree in physics and the Ph.D. in physics from the University of Heidelberg, Germany, in 1996 and 1999 respectively.
In 1997 he worked as a research fellow at the Rutherford Appleton Laboratory, Oxfordshire England. From 2001 to 2006 he was with the IBM T.J. Watson Research Center where his research involved RF circuit design, power amplifier design at 60GHz and 77GHz, high-frequency modeling and packaging for millimeter-wave communication systems.
In 2007 he received a European Young Investigator Award and lead the THz electronics group at the Institute of High-Frequency and Quantum Electronics at the University of Siegen, Germany.
Since 2008 he holds the High-frequency and Communication Technology chair at the University of Wuppertal, Germany.
He was the co-recipient of the 2004 and 2006 Lewis Winner Award for Outstanding Paper at the IEEE International Solid-State Circuit Conference, the co-recipient of the 2006 IBM Pat Goldberg Memorial Best Paper Award, the 2008 EuMIC Best Paper Award, the 2009 Best RFIC Oral Paper Presentation, and the 2010 EuMC Microwave Prize, the 2012 Jan Van Vessem Award for Outstanding European Paper at the 2012 IEEE International Solid-State Circuit Conference, and the 2017 Microwave Prize
Integrated Circuit Design for Terahertz Applications
The push towards terahertz frequencies presents both challenges and opportunities for emerging applications and circuits. This tutorial presents recent attempts to operate silicon technologies close to and beyond their transistor cut-off frequencies. Silicon BiCMOS process technologies have recently reached fmax as high as 0.7 THz, which enables circuits to operate fundamentally up to about 300 GHz with reasonable RF circuit performance. Beyond fmax, where transistors do not provide power gain, circuits may be operated sub-harmonically to extend further the operation region. Despite their increased receiver NF, such circuits prove to be useful for emerging applications. At terahertz frequencies, on-chip antennas may be implemented with reasonably high efficiencies and very small area, thus eliminating the need for additional external components such as expensive waveguides or horn antennas. Topics covered during the tutorial include:
1) Fundamental and sub-harmonic RF circuit design methodologies
2) RF power generation techniques and their limitations at terahertz frequencies (>300GHz)
3) Terahertz circuit characterization methodologies
4) Summary of SiGe HBT terahertz benchmarking circuits
5) Examples include 240GHz Tx/Rx chip-sets for communication, 240GHz radar
transceiver, and heterodyne and direct detection circuits up to 1THz.
6) Emerging terahertz applications
Radio Front-Ends for 100 Gbps and beyond
The terahertz frequency range provides abundant bandwidth (25GHz ~ 50 GHz) to achieve ultra-high-speed wireless communication and enables data rates up to and above 100 Gbps. This talk presents fully-electronic, high spectral efficient radio-front ends in a silicon technology. Wireless links are working at a tunable carrier of 220–260 GHz and are manufactured in a SiGe 0.13um HBT technology with ft /fmax =350/550 GHz.